ECPC71.md

code	title	specifics	prereq	kind
ECPC71	Microelectronics and VLSI Design	branch semester credits EC 7 3 1 0 4	ECPC34 ECPC40	PC

Objectives

• To understand the fabrication process sequence of silicon semiconductor devices and ICs.

Content

Unit 1

• Crystal Growth:
  • MGS (Magnetic Field Guided Single crystal growth)
  • EGS (Edge-defined Film-fed Growth)
  • Czochralski crystal Puller
  • Silicon shaping
  • Wafer Preparation
• Epitaxy
• Oxidation
• Lithography
• Reactive Plasma Etching

Unit 2

• Di-electric and Poly-Silicon Film Deposition:
  • Diffusion
  • Ion Implantation
  • Metallization
  • Metallization Problems

Unit 3

• Assembly & Packaging:
  • Isolation Techniques
  • Bipolar IC fabrication Process Sequence
  • N-MOS IC fabrication Process Sequence

Unit 4

• Microwave Devices:
  • Gunn diode
  • IMPATT
  • PIN
  • Schottky barrier
  • Microwave BJT, MESFET, HEMT
  • Applications

Reference Books

• S.M.Sze, VLSI Technology, Mc Graw Hill.
• S.K.Ghandhi, VLSI Fabrication Principles.
• Pucknell DA &Eshraghian K, Basic VLSI Design, PHI.

Outcomes

• Understand the Crystal Growth techniques in silicon device.
• Understand Oxidation and LithoGraphy techniques in silicon device.
• Understand the deposition and implantation techniques used for device fabrication.
• Understand the key issues with Assembly & Packaging of silicon based ICs.
• Understand the IC fabrication Process Sequence.
• Understand physical design of IC’s: Layout rules, environments and methodologies.